Shaoning Yao
7Patents
4h-index
17Co-inventors
46Inventor score
Filing activity: Jan 19, 2010 → Sep 7, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9324634B2 | Semiconductor interconnect structure having a graphene-based barrier metal layer | Electricity | 8 | Active |
| US8237246B2 | Deep trench crackstops under contacts | Electricity | 7 | Active |
| US9324635B2 | Semiconductor interconnect structure having a graphene-based barrier metal layer | Electricity | 5 | Active |
| US9836570B1 | Semiconductor layout generation | Emerging Cross-Sectional Technologies | 4 | Active |
| US8623673B1 | Structure and method for detecting defects in BEOL processing | Electricity | 2 | Active |
| US9018097B2 | Semiconductor device processing with reduced wiring puddle formation | Electricity | 1 | Active |
| US10438902B2 | Arc-resistant crackstop | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.