Method of releasing devices from a substrate
US6905616B2 · kind B2 · utility
2Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Jul 2, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00952
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Micro devices are formed in situ in a high density in a substrate comprising a masked silicon layer over a stop layer of a silicon compound, by anisotropically etching the desired feature in the silicon layer, overetching to form a notch at the silicon-stop layer interface, depositing a protective fluorocarbon polymer layer on the sidewalls and bottom of the etched silicon layer, and isotropically etching to separate the etched feature from the stop layer. This method avoids the problems of stiction common in other methods of forming micro devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.