Etching multi-shaped openings in silicon
US6979652B2 · kind B2 · utility
13Cited by
6References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2002 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Jul 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.