Ta-Hui Wang
7Patents
3h-index
11Co-inventors
46Inventor score
Filing activity: Aug 14, 2001 → Jun 13, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6512696B1 | Method of programming and erasing a SNNNS type non-volatile memory cell | Physics | 80 | Expired |
| US6445614B1 | Accelerated testing method and circuit for non-volatile memory | Physics | 8 | Expired |
| US7243277B2 | Method of combining multilevel memory cells for an error correction scheme | Physics | 3 | Expired |
| US6552921B2 | Circuit to simulate the polarization relaxation phenomenon of the ferroelectric memory | Physics | 2 | Expired |
| US6563752B2 | Qualification test method and circuit for a non-volatile memory | Physics | 1 | Expired |
| US7916551B2 | Method of programming cell in memory and memory apparatus utilizing the method | Physics | 0 | Active |
| US6512710B1 | Reliability test method and circuit for non-volatile memory | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.