Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby
US8912055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2012 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Dec 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods for forming hybrid metal-oxide-semiconductor field effect transistors (MOSFETs) and the hybrid MOSFETS thus obtained. In one embodiment, a method is disclosed that includes providing a first substrate comprising a first region and a second region, providing a second substrate comprising a second semiconductor layer and an insulating layer overlaying the second semiconductor layer, and direct substrate bonding the second substrate to the first substrate, thereby contacting the first region and the second region with the insulating layer. The method further includes selectively removing the second semiconductor layer and the insulating layer in the first region, thereby exposing the first semiconductor layer in the first region, forming a first gate stack of a first MOSFET on the exposed first semiconductor layer in the first region, and forming a second gate stack of a second MOSFET on the second semiconductor layer in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.