Wendy Ou
6Patents
6h-index
6Co-inventors
45Inventor score
Filing activity: Oct 24, 2012 → May 16, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8988939B2 | Pre-charge during programming for 3D memory using gate-induced drain leakage | Physics | 23 | Active |
| US8891308B1 | Dynamic erase voltage step size selection for 3D non-volatile memory | Physics | 22 | Active |
| US8873293B1 | Dynamic erase voltage step size selection for 3D non-volatile memory | Physics | 22 | Active |
| US8982626B2 | Program and read operations for 3D non-volatile memory based on memory hole diameter | Electricity | 21 | Active |
| US8982637B1 | Vread bias allocation on word lines for read disturb reduction in 3D non-volatile memory | Physics | 21 | Active |
| US8988937B2 | Pre-charge during programming for 3D memory using gate-induced drain leakage | Physics | 16 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.