Willman Tsai
6Patents
5h-index
7Co-inventors
48Inventor score
Filing activity: Dec 31, 2008 → Jul 25, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7759142B1 | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains | Electricity | 25 | Active |
| US7947971B2 | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains | Electricity | 20 | Active |
| US8258498B2 | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains | Electricity | 12 | Active |
| US10084058B2 | Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains | Electricity | 5 | Active |
| US8501508B2 | Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains | Electricity | 5 | Active |
| US9443936B2 | Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.