Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains

US8258498B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Prashant Majhi · San Jose, US
• Mantu K. Hudait · Portland, US
• Jack T. Kavalieros · Portland, US
• Ravi Pillarisetty · Portland, US
• Marko Radosavljevic · Portland, US
• Gilbert Dewey · Beaverton, US
• Titash Rakshit · Austin, US
• Willman Tsai · Saratoga, US

Key dates

• Filing date: Jan 31, 2011
• Grant date: Sep 4, 2012
• Expiry date: Jan 31, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.