Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
US7947971B2 · kind B2 · utility
20Cited by
6References
10Claims
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Key dates
| Filing date | Apr 8, 2010 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Apr 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.