Patent · US Active

Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains

US7759142B1 · kind B1 · utility

25Cited by

4References

17Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Prashant Majhi · San Jose, US
Mantu K. Hudait · Portland, US
Jack T. Kavalieros · Portland, US
Ravi Pillarisetty · Portland, US
Marko Radosavljevic · Portland, US
Gilbert Dewey · Beaverton, US
Titash Rakshit · Austin, US
Willman Tsai · Saratoga, US

Key dates

Filing date	Dec 31, 2008
Grant date	Jul 20, 2010
Priority date	—
Expiry date	Jan 8, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/822
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.