Semiconductor memory device including memory cells each having an information storage capacitor component formed over control electrode of cell selecting transistor
US5684315A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 23, 1994 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | Dec 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/31
Abstract
A semiconductor memory device has memory cells provided at intersections between word line conductors and data line conductors. Each of the memory cells includes a cell selecting transistor and an information storage capacitor. The capacitor in each of the memory cells includes a first capacitor component formed over the control electrode of the transistor and a second capacitor component formed over a word line conductor which is adjacent to a word line conductor integral with the control electrode of the transistor. Each of the first and second capacitor components has a common electrode, a storage electrode and a dielectric film sandwiched therebetween, and the storage electrode is at a level higher than the common electrode in each of said first and second capacitor components. The storage electrodes of the first and second capacitor components are electrically connected with each other and with one of the semiconductor regions of the transistor. The other semiconductor region of the transistor is electrically connected with one of the data line conductors. Patterning of the storage electrodes of the first and second capacitor components is preferalbly effected by use of masks …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.