Yasushi Haga
4Patents
2h-index
1Co-inventors
24Inventor score
Filing activity: Aug 2, 2002 → Oct 17, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6780701B2 | Method for manufacturing high-breakdown voltage transistor and low-breakdown voltage transistor on the same substrate | Electricity | 3 | Expired |
| US6720222B2 | Method of manufacturing semiconductor device | Electricity | 2 | Expired |
| US6638804B2 | Method of manufacturing semiconductor device with high and low breakdown transistors | Electricity | 2 | Expired |
| US6916714B2 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH A HIGH-BREAKDOWN-VOLTAGE MOS TRANSISTOR AND A LOW-BREAKDOWN-VOLTAGE MOS TRANSISTOR ARE FORMED ON AN IDENTICAL SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.