Ying Wu
46Patents
6h-index
28Co-inventors
65Inventor score
Filing activity: May 31, 2006 → Jan 23, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9583357B1 | Systems and methods for reverse pulsing | Electricity | 90 | Active |
| US9761459B2 | Systems and methods for reverse pulsing | Electricity | 85 | Active |
| US8306184B2 | X-ray pixel beam array systems and methods for electronically shaping radiation fields and modulation radiation field intensity patterns for radiotherapy | Human Necessities | 69 | Active |
| US9991128B2 | Atomic layer etching in continuous plasma | Electricity | 21 | Active |
| US9966236B2 | Powered grid for plasma chamber | Electricity | 6 | Active |
| US10224183B1 | Multi-level parameter and frequency pulsing with a low angular spread | Electricity | 6 | Active |
| US10573494B2 | Multi-level parameter and frequency pulsing with a low angular spread | Electricity | 4 | Active |
| US9293353B2 | Faraday shield having plasma density decoupling structure between TCP coil zones | Electricity | 4 | Active |
| US10304660B1 | Multi-level pulsing of DC and RF signals | Electricity | 3 | Active |
| US9824896B2 | Methods and systems for advanced ion control for etching processes | Emerging Cross-Sectional Technologies | 3 | Active |
| US10679825B2 | Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate | Electricity | 2 | Active |
| US10395894B2 | Systems and methods for achieving peak ion energy enhancement with a low angular spread | Electricity | 2 | Active |
| US9767991B2 | Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication | Electricity | 2 | Active |
| US10672590B2 | Frequency tuning for a matchless plasma source | Electricity | 2 | Active |
| US10580618B2 | Multi-level pulsing of DC and RF signals | Electricity | 2 | Active |
| US11342159B2 | RF pulsing within pulsing for semiconductor RF plasma processing | Electricity | 1 | Active |
| US10943789B2 | Methods and systems for advanced ion control for etching processes | Emerging Cross-Sectional Technologies | 1 | Active |
| US11011351B2 | Monoenergetic ion generation for controlled etch | Electricity | 1 | Active |
| US11462390B2 | Multi-level parameter and frequency pulsing with a low angular spread | Electricity | 1 | Active |
| US10340915B2 | Frequency and match tuning in one state and frequency tuning in the other state | Electricity | 1 | Active |
| US10879044B2 | Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing | Electricity | 1 | Active |
| US10009028B2 | Frequency and match tuning in one state and frequency tuning in the other state | Electricity | 1 | Active |
| US11728136B2 | RF pulsing within pulsing for semiconductor RF plasma processing | Electricity | 1 | Active |
| US10242845B2 | Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber | Electricity | 0 | Active |
| US9805963B2 | Electrostatic chuck with thermal choke | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.