Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber
US10242845B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | Jan 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/4652
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode within the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequency signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.