Methods and systems for advanced ion control for etching processes
US9824896B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2015 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Nov 4, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.