Yoshio Enosawa
3Patents
3h-index
9Co-inventors
43Inventor score
Filing activity: Jul 25, 1988 → Aug 3, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4977436A | High density DRAM | Electricity | 20 | Expired |
| US6773997B2 | Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability | Electricity | 17 | Expired |
| US6492679B1 | Method for manufacturing a high voltage MOSFET device with reduced on-resistance | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.