Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes
US10002664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2014 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Sep 18, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/54
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention more particularly relates to a resistive memory cell comprising a first and a second metal electrodes and a solid electrolyte positioned between the first and the second metal electrodes, with the solid electrolyte comprising a commutation layer in contact with the first electrode and a dielectric layer, with said resistive memory cell being able to be electrically modified so as to switch from a first resistive state to a second resistive state (state LRS) wherein the resistance (RON) of the memory cell is at least ten times smaller than the resistance (ROFF) of the memory cell in the HRS state, in the LRS state the first electrode being so arranged as to supply metal ions intended to form at least a conductive filament through said commutation layer, with the cell being characterized in that, in the LRS state, the memory cell is conductive for a range of voltages between 0 Volts and
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.