Patent · US Active

Semiconductor substrate structure, semiconductor package and method of manufacturing the same

US10002843B2 · kind B2 · utility

0Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 24, 2015
Grant dateJun 19, 2018
Priority date
Expiry dateMar 24, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure relates to a semiconductor substrate structure, semiconductor package and method of manufacturing the same. The semiconductor substrate structure includes a conductive structure and a dielectric structure. The conductive structure has a first conductive surface and a second conductive surface opposite to the first conductive surface. The dielectric structure covers at least a portion of the conductive structure, and has a first dielectric surface and a second dielectric surface opposite to the first dielectric surface. The first conductive surface does not protrude from the first dielectric surface, and the second conductive surface is recessed from the second dielectric surface. The dielectric structure includes, or is formed from, a photo-sensitive resin, and the dielectric structure defines a dielectric opening in the second dielectric surface to expose a portion of the second conductive surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.