Apparatus and methods for buried channel transfer gate
US10002895B2 · kind B2 · utility
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10Claims
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Assignee
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Key dates
| Filing date | Oct 14, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Oct 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8033
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.