Forming a contact layer on a semiconductor body

US10002930B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Roland Rupp · Achern, DE
• Jens Peter Konrath · Villach, AT
• Francisco Javier Santos Rodriguez · Villach, AT
• Carsten Schaeffer · Annenheim, AT
• Hans-Joachim Schulze · Taufkirchen, DE
• Werner Schustereder · Villach, AT
• Guenther Wellenzohn · Villach, AT

Key dates

• Filing date: Nov 30, 2016
• Grant date: Jun 19, 2018
• Expiry date: Nov 30, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28575
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a method. The method includes forming a metal layer on a first surface of a semiconductor body; irradiating the metal layer with particles to move metal atoms from the metal layer into the semiconductor body and form a metal atom containing region in the semiconductor body; and annealing the semiconductor body. The annealing includes heating at least the metal atom containing region to a temperature of less than 500° C.