Apparatus and techniques to treat substrates using directional plasma and reactive gas

US10004133B2 · kind B2 · utility

Assignee

• Varian Semiconductor Equipment Associates, Inc. · US

Inventors

• Shurong Liang · Lynnfield, US
• Costel Biloiu · Rockport, US
• Glen Gilchrist · Danvers, US
• Vikram Singh · North Andover, US
• Christopher Campbell · Newburyport, US
• Richard J. Hertel · Fort Wayne, US
• Alexander C. Kontos · Beverly, US
• Piero Sferlazzo · Marblehead, US
• Tsung-Liang Chen · Zhubeikou, TW

Key dates

• Filing date: Jul 7, 2017
• Grant date: Jun 19, 2018
• Expiry date: Jul 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/327
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.