Controlled-porosity method for forming polishing pad
US10005172B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 26, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Jun 29, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB29L2031/736
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
The invention is to a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method includes applying droplets of a liquid polymer against a substrate to form a plurality of pores. The liquid polymer contains a nonionic surfactant, the nonionic surfactant has a concentration sufficient to facilitate growth of pores within the liquid polymer and an ionic surfactant has a concentration sufficient to limit growth of the pores within the liquid polymer. Curing the solid polymer forms a polishing pad with final size of the plurality of pores controlled by the concentration of nonionic surfactant and ionic surfactants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.