Semiconductor device having metal gate with nitrogen rich portion and titanium rich portion
US10008581B2 · kind B2 · utility
0Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Aug 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate and a gate structure on the substrate. The gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, in which the top portion being a nitrogen rich portion, and the middle portion and the bottom portion being titanium rich portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.