Method for patterning a thin film
US10014183B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 9, 2015 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Nov 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing at least one pattern in a layer resting on a substrate, including: a) making amorphous at least one first block of an upper layer of crystalline material resting on a first amorphous supporting layer, while the crystalline structure of a second block of the upper layer that adjoins and is juxtaposed with the first block is preserved; b) partially recrystallizing the first block by using at least one side surface of the second block that is in contact with the first block as an area for the start of a recrystallization front, the partial recrystallization being carried out to preserve a region of amorphous material in the first block; c) selectively etching the amorphous material of the upper layer with respect to the crystalline material of the upper layer to form at least one first pattern in the upper layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.