Method and apparatus for controlling plasma near the edge of a substrate
US10017857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | May 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68785
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.