Method for depositing ALD films using halide-based precursors
US10020188B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2017 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Nov 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.