Method for reducing porogen accumulation from a UV-cure chamber
US10020197B2 · kind B2 · utility
2Cited by
113References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 2015 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Apr 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.