Patent · US Active

Method of etching the back of a wafer to expose TSVs

US10026660B2 · kind B2 · utility

0Cited by
7References
32Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 30, 2015
Grant dateJul 17, 2018
Priority date
Expiry dateJan 19, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/20
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.