Method of etching the back of a wafer to expose TSVs
US10026660B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jan 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.