Source/drain performance through conformal solid state doping

US10032628B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Qi Xie · Wilsele, BE
• David Kurt de Roest · Kessel-Lo, BE
• Jacob Woodruff · Scottsdale, US
• Michael Eugene Givens · Phoenix, US
• Jan Willem Maes · Wilrijk, BE
• Timothee Blanquart · Tama, JP

Key dates

• Filing date: May 2, 2016
• Grant date: Jul 24, 2018
• Expiry date: May 2, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.