Plasma dicing of silicon carbide

US10032670B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Roesner · Villach, AT
• Manfred Engelhardt · Feldkirchen-Westerham, DE
• Gudrun Stranzl · Eisenlohrsweg, AT

Key dates

• Filing date: Jun 14, 2016
• Grant date: Jul 24, 2018
• Expiry date: Jun 14, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a semiconductor device includes forming an active region in a first side of a silicon carbide substrate, the silicon carbide substrate having a second side opposite the first side and forming a contact pad at the first side. The contact pad is coupled to the active region. The method further includes forming an etch stop layer over the contact pad and plasma dicing the silicon carbide substrate from the second side. The plasma dicing etches through the silicon carbide substrate and stops on the etch stop layer. The diced silicon carbide substrate is held together by the etch stop layer. The diced silicon carbide substrate is attached on a carrier. The diced silicon carbide substrate is separated into silicon carbide dies by cleaving the etch stop layer.