Method for implanting ions into a semiconductor substrate and an implantation system

US10037887B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Brugger · Seeboden, AT
• Moriz Jelinek · Villach, AT
• Johannes Georg Laven · Taufkirchen, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Werner Schustereder · Villach, AT

Key dates

• Filing date: Feb 16, 2017
• Grant date: Jul 31, 2018
• Expiry date: Feb 16, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L22/20
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for implanting ions into a semiconductor substrate includes performing a test implantation of ions into a semiconductor substrate. The ions of the test implantation are implanted with a first implantation angle range over the semiconductor substrate. Further, the method includes determining an implantation angle offset based on the semiconductor substrate after the test implantation and adjusting a tilt angle of the semiconductor substrate with respect to an implantation direction based on the determined implantation angle offset. Additionally, the method includes performing at least one target implantation of ions into the semiconductor substrate after the adjustment of the tilt angle. The ions of the at least one target implantation are implanted with a second implantation angle range over the semiconductor substrate. Further, the first implantation angle range is larger than the second implantation angle range.