Patent · US Active

Semiconductor device with channelstopper and method for producing the same

US10038052B2 · kind B2 · utility

1Cited by

2References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Elmar Falck · Hohenbrunn, DE
Frank Pfirsch · Birkenfeld, DE
Hans-Joachim Schulze · Taufkirchen, DE
Stephan Voss · Munich, DE

Key dates

Filing date	Mar 30, 2016
Grant date	Jul 31, 2018
Priority date	—
Expiry date	Mar 30, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/393
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A vertical semiconductor device comprises a substrate having a front surface and a back surface, an active area (AA) located in the substrate, having a drift region doped with a first dopant type, an edge termination region (ER) laterally surrounding the active area (AA), a channelstopper terminal provided at the front surface and located in the edge termination region (ER), and a first suppression trench located on a side of the channelstopper terminal towards the active region (AA), and provided adjacent to the channelstopper terminal. Further, a production method for such a semiconductor device is provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.