Three dimensional storage cell array with highly dense and scalable word line design approach
US10043751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2016 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Mar 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus is described. The apparatus includes a three dimensional storage cell array structure. The apparatus also includes a staircase structure having alternating conductive and dielectric layers, wherein respective word lines are formed in the conductive layers. The word lines are connected to respective storage cells within the three dimensional storage cell array structure. The apparatus also includes upper word lines above the staircase structure that are connected to first vias that connect to respective steps of the staircase structure. The upper word lines are also connected to second vias that run vertically off a side of the staircase structure other than a side opposite the three dimensional storage cell array structure. The second vias are connected to respective word line driver transistors that are disposed beneath the staircase structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.