Airgaps to isolate metallization features
US10043753B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2016 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Dec 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to airgaps which isolate metal lines and methods of manufacture. The structure includes: a plurality of metal lines formed on an insulator layer; and a dielectric material completely filling a space having a first dimension between metal lines of the plurality of metal lines and providing a uniform airgap with a space having a second dimension between metal lines of the plurality of metal lines. The first dimension is larger than the second dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.