Vertically stacked nanowire field effect transistors

US10043796B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Vladimir Machkaoutsan · Leuven, BE
• Stanley Seungchul Song · San Diego, US
• Mustafa Badaroglu · Kessel-Lo, BE
• John Jianhong Zhu · San Diego, US
• Junjing Bao · Fishkill, US
• Jeffrey Junhao Xu · San Diego, US
• Da Yang · San Diego, US
• Matthew Michael Nowak · San Diego, US
• Choh Fei Yeap · San Diego, US

Key dates

• Filing date: Apr 12, 2016
• Grant date: Aug 7, 2018
• Expiry date: Apr 12, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0149

Abstract

A device includes a substrate, a first nanowire field effect transistor (FET), and a second nanowire FET positioned between the substrate and the first nanowire FET. The device also includes a first nanowire electrically coupled to the first nanowire FET and to the second nanowire FET.