Metal silicide, metal germanide, methods for making the same
US10043880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Apr 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.