Method of forming semiconductor device
US10043882B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Jan 8, 2018 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jan 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes the following steps. A substrate is provided, and the substrate has a first region. A barrier layer is then formed on the first region of the substrate. A first work function layer is formed on the barrier layer. An upper half portion of the first work function layer is converted into a non-volatile material layer. The non-volatile material layer is removed and a lower half portion of the first work function layer is kept.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.