Projection lens, projection exposure apparatus and projection exposure method for EUV microlithography
US10048592B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Feb 24, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70258
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength λ from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.