Self aligned silicon carbide contact formation using protective layer

US10049879B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ravi Keshav Joshi · Klagenfurt, AT
• Romain Esteve · Munich, DE
• Markus Kahn · Rangersdorf, AT
• Kurt Pekoll · Villach, AT
• Juergen Steinbrenner · Zistersdorf, AT
• Gerald Unegg · Villach, AT

Key dates

• Filing date: May 1, 2017
• Grant date: Aug 14, 2018
• Expiry date: May 1, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A silicon-carbide substrate that includes: a doped silicon-carbide contact region directly adjoining a main surface of the substrate, and a dielectric layer covering the main surface is provided. A protective layer is formed on the silicon-carbide substrate such that the protective layer covers the dielectric layer and exposes the doped silicon-carbide contact region at the main surface. A metal layer that conforms to the protective layer and directly contacts the exposed doped silicon-carbide contact region is deposited. A first rapid thermal anneal process is performed. A thermal budget of the first rapid thermal anneal process is selected to cause the metal layer to form a silicide with the doped silicon-carbide contact region during the first rapid thermal anneal process without causing the metal layer to form a silicide with the protective layer during the first rapid thermal anneal process.