Seam-healing method upon supra-atmospheric process in diffusion promoting ambient
US10049927B2 · kind B2 · utility
13Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2016 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Oct 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.