Replacement materials processes for forming cross point memory
US10050084B2 · kind B2 · utility
3Cited by
28References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Apr 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.