Semiconductor device and method of forming the same
US10050146B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2014 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Aug 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.