Inventor · Luzhu District, TW

Man-Ling Lu

15Patents

3h-index

14Co-inventors

49Inventor score

Filing activity: Jul 27, 2014 → Aug 6, 2019

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9385191B2	FINFET structure	Electricity	7	Active
US9780218B1	Bottom-up epitaxy growth on air-gap buffer	Emerging Cross-Sectional Technologies	5	Active
US9786510B2	Fin-shaped structure and manufacturing method thereof	Electricity	5	Active
US9899523B2	Semiconductor structure	Electricity	3	Active
US9691901B2	Semiconductor device	Electricity	3	Active
US10050146B2	Semiconductor device and method of forming the same	Electricity	2	Active
US9224864B1	Semiconductor device and method of fabricating the same	Electricity	2	Active
US10158022B2	Bottom-up epitaxy growth on air-gap buffer	Emerging Cross-Sectional Technologies	2	Active
US9373718B2	Etching method for forming grooves in Si-substrate and fin field-effect transistor	Electricity	1	Active
US9634125B2	Fin field effect transistor device and fabrication method thereof	Electricity	1	Active
US9978854B2	Fin field-effect transistor	Electricity	0	Active
US10418251B2	Method of forming fin-shaped structure having ladder-shaped cross-sectional profile	Electricity	0	Active
US10529856B2	Method of forming semiconductor device	Electricity	0	Active
US10930517B2	Method of forming fin-shaped structure	Electricity	0	Active
US9397190B2	Fabrication method of semiconductor structure	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.