Ferroelectric FinFET

US10056376B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Stefan Flachowsky · Dresden, DE
• Ralf Illgen · Dresden, DE
• Jan Hoentschel · Dresden, DE

Key dates

• Filing date: Aug 16, 2016
• Grant date: Aug 21, 2018
• Expiry date: Sep 22, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A semiconductor device includes a semiconductor substrate and a fin positioned above the semiconductor substrate, wherein the fin includes a semiconductor material. Additionally, a ferroelectric high-k spacer covers sidewall surfaces of the fin and a non-ferroelectric high-k material layer covers the ferroelectric high-k spacer and the fin, wherein a portion of the non-ferroelectric high-k material layer is positioned on and in direct contact with the semiconductor material at the upper surface of the fin.