Resistive memory sensing
US10062432B2 · kind B2 · utility
1Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2015 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | May 10, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0057
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.