Patent · US Active

Method and system for constructing FINFET devices having a super steep retrograde well

US10062612B2 · kind B2 · utility

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19Claims
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Assignee

Inventors

Key dates

Filing dateOct 7, 2016
Grant dateAug 28, 2018
Priority date—
Expiry dateOct 7, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/834
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Generally, the present disclosure is directed to a method for forming a FinFET device that may be used in designs that include both tight and relaxed fin pitches. The method for forming the fins includes: forming a first layer of doped silicate glass above a semiconductor wafer and within a plurality of recesses located adjacent the fins; forming a first layer of nitride above the first doped silicate glass layer; and forming a conformal oxide layer above the first nitride layer, substantially filling relatively narrow recesses between fins having a tight pitch and lining relatively wide recesses between fins having a relaxed pitch.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.