Selective metal oxide deposition using a self-assembled monolayer surface pretreatment

US10068764B2 · kind B2 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Kandabara Tapily · Mechanicville, US
• Gerrit J. Leusink · Albany, US
• Cory Wajda · Sand Lake, US
• Hoyoung Kang · Guilderland, US

Key dates

• Filing date: Sep 12, 2017
• Grant date: Sep 4, 2018
• Expiry date: Sep 12, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the invention provide methods for selective film deposition using a surface pretreatment. According to one embodiment, the method includes providing a substrate containing a dielectric layer and a metal layer, exposing the substrate to a reactant gas containing a molecule that forms self-assembled monolayers (SAMs) on the substrate, and thereafter, selectively depositing a metal oxide film on a surface of the dielectric layer relative to a surface of the metal layer by exposing the substrate to a deposition gas.