Patent · US Active

Bond-over-active circuity gallium nitride devices

US10069002B2 · kind B2 · utility

1Cited by
5References
19Claims
0Family size

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Key dates

Filing dateJul 20, 2016
Grant dateSep 4, 2018
Priority date—
Expiry dateJul 20, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/475
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Implementations of semiconductor devices may include: a first layer with a plurality of cells, each cell having a drain finger, a source finger and a gate ring; a second layer having a drain pad and a source pad, the drain pad having a width and a source pad having a width substantially the same as the drain pad; wherein a width of each drain finger of the first layer is wider than a width of each source finger of the first layer; and wherein each drain pad is coupled to each drain finger through a first contact and the source pad is coupled to each source finger through a second contact, where a width of the first contact is wider than a width of the second contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.