Inventor · Scottsdale, AZ, US

Chun-Li Liu

56Patents
9h-index
56Co-inventors
81Inventor score

Filing activity: May 17, 2000 → Sep 12, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US6831350B1 Semiconductor structure with different lattice constant materials and method for forming the same Electricity 78 Expired
US7238580B2 Semiconductor fabrication process employing stress inducing source drain structures with graded impurity concentration Electricity 43 Expired
US7221006B2 GeSOI transistor with low junction current and low junction capacitance and method for making the same Electricity 32 Expired
US6717226B2 Transistor with layered high-K gate dielectric and method therefor Electricity 30 Expired
US7932189B2 Process of forming an electronic device including a layer of discontinuous storage elements Emerging Cross-Sectional Technologies 14 Active
US7029980B2 Method of manufacturing SOI template layer Emerging Cross-Sectional Technologies 13 Expired
US9673311B1 Electronic device including a multiple channel HEMT Electricity 13 Active
US7166897B2 Method and apparatus for performance enhancement in an asymmetrical semiconductor device Electricity 10 Expired
US7544576B2 Diffusion barrier for nickel silicides in a semiconductor fabrication process Electricity 10 Active
US6518070B1 Process of forming a semiconductor device and a semiconductor device Electricity 9 Expired
US9257513B1 Semiconductor component and method Electricity 7 Active
US9799646B2 Cascode configured semiconductor component Electricity 5 Active
US9748224B2 Heterojunction semiconductor device having integrated clamping device Electricity 5 Active
US9620598B2 Electronic device including a channel layer including gallium nitride Electricity 4 Active
US7935620B2 Method for forming semiconductor devices with low leakage Schottky contacts Electricity 4 Active
US9842920B1 Gallium nitride semiconductor device with isolated fingers Electricity 4 Active
US7700438B2 MOS device with nano-crystal gate structure Electricity 3 Active
US7241647B2 Graded semiconductor layer Electricity 3 Expired
US9735095B2 Semiconductor component and method of manufacture Electricity 2 Active
US7928502B2 Transistor devices with nano-crystal gate structures Electricity 2 Active
US7056778B2 Semiconductor layer formation Emerging Cross-Sectional Technologies 2 Expired
US9818677B2 Semiconductor component having group III nitride semiconductor device mounted on substrate and interconnected to lead frame Electricity 2 Active
US9214423B2 Method of forming a HEMT semiconductor device and structure therefor Electricity 1 Active
US8592878B2 Semiconductor devices with low leakage Schottky contacts Electricity 1 Active
US10199373B2 Method of forming a heterojunction semiconductor device having integrated clamping device Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.