Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
US10074414B2 · kind B2 · utility
24Cited by
26References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2017 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Aug 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatuses and methods are disclosed that in ferroelectric memory and for operating ferroelectric memory. An example apparatus includes a capacitor having a first plate, a second plate, and a ferroelectric dielectric material. The apparatus further includes a first digit line and a first selection component configured to couple the first plate to the first digit line, and also includes a second digit line and a second selection component configured to couple the second plate to the second digit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.